2SB1189

2SB1 1 8 9 TRANSISTOR(PNP) FEATURES High breakdown voltage Complements to 2SD1767 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -80 -80 -5 -0.7 0.5 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -80 -80 -5 -0.5 -0.5 82 390 -0.4 100 20 V MHz pF TYP MAX UNIT V V V μA μA IC=-50μA,IE=0 IC=-2mA,IB=0 IE=-50μA,IC=0 VCB=-50V,IE=0 VEB=-4V,IC=0 VCE=-3V,IC=-100mA IC=-500mA,IB=-50mA VCE=-10V,IC=-50mA,f=100MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking １　 JinYu hFE P 82-180 BDP Q 120-270 BDQ R 180-390 BDR semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 1 8 9 Typical Characteristics 2SB1189 ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５