2SB1260

2SB1 260 TRANSISTOR(PNP) SOT-89-3L 1. BASE FEATURES Power Transistor High Voltage and Current Low Collector-emitter saturation voltage Complements the 2SD1898 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -80 -80 -5 -1 500 250 150 -55~+150 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions Min -80 -80 -5 -1 -1 82 25 100 390 -0.4 V pF MHz Typ Max Unit V V V µA µA IC=-50µA,IE=0 IC=-1mA,IB=0 IE=-50µA,IC=0 VCB=-60V,IE=0 VEB=-4V,IC=0 VCE=-3V, IC=-0.1A IC=-500mA,IB=-50mA VCB=-10V,IE=0, f=1MHz VCE=-5V,IC=-50mA, f=30MHz CLASSIFICATION OF hFE RANK RANGE MARKING P 82–180 Q 120–270 ZL R 180–390 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５