2SB1308

2SB1 308 TRANSISTOR SOT-89-3L 1. BASE FEATURES Power Transistor Excellent DC current Gain Low Collector-emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -30 -20 -6 -3 500 250 150 -55~+150 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Collector output capacitance Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Cob fT Test conditions Min -30 -20 -6 -0.5 -0.5 82 60 120 390 -0.45 V pF MHz Typ Max Unit V V V µA µA IC=-50µA,IE=0 IC=-1mA,IB=0 IE=-50µA,IC=0 VCB=-20V,IE=0 VEB=-5V,IC=0 VCE=-2V, IC=-0.5A IC=-1.5A,IB=-0.15A VCB=-20V,IE=0, f=1MHz VCE=-6V,IC=-50mA, f=30MHz CLASSIFICATION OF hFE RANK RANGE MARKING P 82–180 BFP Q 120–270 BFQ R 180–390 BFR １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５