2SB1386

2SB1 38 6 TRANSISTOR(PNP) FEATURES Low collector saturation voltage, Execllent current-to-gain characteristics MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -20 -6 -5 0.5 150 -55-150 Units V V V A W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions MIN -30 -20 -6 -0.5 -0.5 82 390 -1 120 60 V MHz pF TYP MAX UNIT V V V μA μA IC=-50μA,IE=0 IC=-1mA,IB=0 IE=-50μA,IC=0 VCB=-20V,IE=0 VEB=-5V,IC=0 VCE=-2V,IC=-500mA IC=-4A,IB=-100mA VCE=-6V,IC=-50mA,f=30MHz VCB=-20V,IE=0,f=1MHz CLASSIFICATION OF Rank Range Marking １　 JinYu hFE P 82-180 BHP Q 120-270 BHQ R 180-390 BHR semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 38 6 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 38 6 ３ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５