2SB1440

2SB1 440 TRANSISTOR(PNP) SOT-89 FEATURES Low collector-emitter saturation voltage VCE(sat) For low-frequency output amplification Complementary to 2SD2185 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -50 -50 -5 -2 500 150 -55-150 Units V V V A mW ℃ ℃ 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE1 DC current gain hFE2 Collector-emitter saturation voltage Base- emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) fT Cob VCE=-2V, IC=-1A IC=-1A, IB=-50mA IC=-1A, IB=-50mA VCE=-10V, IC=50mA, f=200MHz VCB=-10V, IE=0, f=1MHz 80 60 60 -0.3 -1..2 V V MHz pF Test IC=-10μA, IE=0 IC=-1mA, IB=0 IE=-10μA, IC=0 VCB=-50V, IE=0 VEB=-5V, IC=0 VCE=-2V, IC=-200mA 120 conditions MIN -50 -50 -5 -1 -1 340 TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range Marking hFE1 R 120-240 1L S 170-340 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB1 440 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５