2SB766

2SB7 66 TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Large collector power dissipation PC Complementary to 2SD874 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -30 -25 -5 -1 500 150 -55-150 Units V V V A mW ℃ ℃ 2. COLLECTOR 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain hFE(2) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) VBE(sat) fT Cob VCE=-5V, IC=-1A IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA VCE=-10V, IC=-50mA, f=200MHz VCB=-10V, IE=0, f=1MHz 50 -0.2 -0.85 200 20 30 -0.4 -1.2 V V MHz pF Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) Test IC =-10μA, IE=0 IC =-2mA, IB=0 IE=-10μA, IC=0 VCB=-20V, IE=0 VEB=-4V, IC=0 VCE=-10V, IC=-500mA 85 conditions MIN -30 -25 -5 -0.1 -0.1 340 TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range Marking １　 JinYu hFE(1) Q 85-170 AQ R 120-240 AR S 170-340 AS semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB7 66 Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５