2SB766A

2SB7 66A TRANSISTOR(PNP) SOT-89 1. BASE FEATURES Large collector power dissipation PC Complementary to 2SD874A MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -50 -5 -1 500 150 -55-150 Units V V V A mW ℃ ℃ 2. COLLECTOR 1 2 3 3. EMITTER ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test conditions MIN -60 -50 -5 -0.1 -0.1 85 50 -0.2 -0.85 200 20 30 -0.4 -1.2 V V MHz pF 340 TYP MAX UNIT V V V μA μA Ic=-10μA,IE=0 Ic=-2mA,IB=0 IE=-10μA,IC=0 VCB=-20V,IE=0 VEB=-4V,IC=0 VCE=-10V,IC=-500mA VCE=-5V,IC=-1A IC=-500mA,IB=-50mA IC=-500mA,IB=-50mA VCE=-10V,IC=-50mA,f=200MHz VCB=-10V,IE=0,f=1MHz CLASSIFICATION OF Rank Range hFE(1) Q 85-170 R 120-240 S 170-340 MAKING BQ BR BS １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ 2SB7 66A Typical Characteristics ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５