2SC1654

2SC1654 TRANSISTOR(NPN) SOT–23 FEATURES  High Frequency Power Amplifier Application  Power Swithing Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 180 160 5 50 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test conditions Min 180 160 5 0.1 0.1 90 70 0.3 1 120 2.3 V V MHz pF 400 Typ Max Unit V V V µA µA IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=130V, IE=0 VEB=5V, IC=0 VCE=3V, IC=15mA VCE=3V, IC=1mA IC=50mA, IB=5mA IC=50mA, IB=5mA VCE=10V,IC=10mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING N5 90–180 N5 N6 135–270 N6 N7 200–400 N7 １　 JinYu semiconductor www.htsemi.com