2SC1766

2SC1766 TRANSISTOR(NPN) FEATURES Small Flat Package High Speed Switching Time Low Collector-emitter saturation voltage APPLICATIONS Power Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 50 50 5 2 500 250 150 -55~+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2)* VCE(sat) VBE(sat) fT Test conditions Min 50 50 5 0.1 0.1 70 20 0.5 1.2 120 V V MHz 240 Typ Max Unit V V V µA µA IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 VCB=50V,IE=0 VEB=5V,IC=0 VCE=2V, IC=0.5A VCE=2V, IC=2A IC=1A,IB=50mA IC=1A,IB=50mA VCE=2V,IC=0.5A,f=100MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING P 82–180 P1766 Q 120–270 Q1766 Y 180–390 Y1766 *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com