2SC2411

2SC2411 TRANSISOR(NPN) FEATURES High ICMax.ICMax. = 0.5mA Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1036 SOT-23 1. BASE 2. EMITTER 3. COLLECTOR MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Junction Temperature Storage Temperature Value 40 32 5 500 200 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25 ℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) Test conditions MIN TYP MAX UNIT V V V IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=3V,IC=100mA IC=500mA,IB=50mA VCE=5V,IC=20mA,f=100MHz VCB=10V,IE=0,f=1MHz 40 32 5 1 1 82 390 0.4 250 6.0 μA μA V MHz pF fT Cob CLASSIFICATION OF Rank Range Marking hFE P 82-180 CP Q 120-270 CQ R 180-390 CR １　 JinYu semiconductor www.htsemi.com 2SC2411 ２ JinYu semiconductor www.htsemi.com