2SC2712

2SC2712 TRANSISTOR (NPN) FEATURE · Low Noise: NF=1 dB (Typ),10dB(MAX) · Complementary to 2SA1162 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) SOT-23 1. BASE 2. EMITTER 3. COLLECTOR Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 60 50 5 150 150 150 -55-150 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Output capacitance Noise Figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions MIN 60 50 5 0.1 0.1 70 0.1 80 2.0 1.0 3.5 10 700 0.25 V MHz pF dB TYP MAX UNIT V V V μA μA IC= 100μA, IE=0 IC=1mA , IB=0 IE= 100μA, IC=0 VCB= 60 V, IE=0 VEB=5V, IC=0 VCE=6V, IC=2mA IC= 100mA, IB=10mA VCE=10V, IC= 1mA VCB=10V, IE=0,f=1 MHz VCE=6V,IC=0.1mA,f=1kHz, Rg=10kΩ CLASSIFICATION OF hFE Rank Range Marking O 70-140 LO Y 120-240 LY GR 200-400 LG BL 350-700 LL １　 JinYu semiconductor www.htsemi.com 2SC2712 ２　 JinYu semiconductor www.htsemi.com 2SC2712 ３ JinYu semiconductor www.htsemi.com