2SC2714

2SC2714 TRANSISTOR (NPN) FEATURES Small reverse Transfer Capacitance:Cre=0.7pF(typ.) Low Noise Figure:NF=2.5dB(typ.) (f=100MHz) MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 30 4 20 100 125 -55-+125 Units V V V mA mW ℃ ℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Reverse Transfer capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT Cre NF Test conditions MIN 40 30 4 0.5 0.5 40 550 0.7 2.5 5 200 MHz pF dB TYP MAX UNIT V V V μA μA IC=10μA,IE=0 IC=1mA,IB=0 IE=10μA,IC=0 VCB=18V,IE=0 VEB=4V,IC=0 VCE=6V,IC=1mA VCE=6V,IC=1mA VCB=6V,IE=0,f=1MHz VCE=6V,Ic=1mA,f=100MHZ CLASSIFICATION OF Rank Range Marking hFE R 40-80 QR O 70-140 QO Y 100-200 QY １　 JinYu semiconductor www.htsemi.com Typical Characteristics 2SC2714 ２ JinYu semiconductor www.htsemi.com ３ JinYu semiconductor www.htsemi.com