2SC2715

2SC2715 TRANSISTOR (NPN) FEATURES SOT-23 1. BASE High Power Gain Recommended for FM IF,OSC Stage and AM CONV. IF Stage. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 35 30 4 50 350 150 -55-150 Units V V V mA mW ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Power Gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) VBE(sat) Test IC=10μA, IE=0 IC=1mA, IB=0 IE=10μA, IC=0 VCB=35V, IE=0 VEB=4V, IC=0 VCE=12V, IC=2mA IC=10mA, IB=1mA IC=10mA, IB=1mA VCE=10V, IC=1mA VCE=6V, IC=1mA, f=10.7MHZ 100 27 conditions MIN TYP MAX UNIT V V V 35 30 4 0.1 0.1 40 240 0.4 1 400 33 μA μA V V MHz dB fT Gpe CLASSIFICATION OF Rank Range Marking １　 JinYu hFE(1) R 40-80 RR1 O 70-140 RO1 Y 120-240 RY1 semiconductor www.htsemi.com 2SC2715 ２ JinYu semiconductor www.htsemi.com 2SC2715 ３ JinYu semiconductor www.htsemi.com 2SC2715 ４ JinYu semiconductor www.htsemi.com