2SC2859

2 SC2859 TRANSISTOR (NPN) SOT–23 FEATURES  Excellent hFE Linearity  Switching Applications MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 35 30 5 500 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Min 35 30 5 0.1 0.1 70 25 400 70 0.25 1 300 7 V V MHz pF Typ Max Unit V V V µA µA IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=35V, IE=0 VEB=5V, IC=0 VCE=1V, IC=100mA VCE=6V, IC=400mA IC=100mA, IB=10mA VCE=1V,IC=100mA, VCE=6V,IC=20mA VCB=6V, IE=0, f=1MHz CLASSIFICATION OF hFE(1), hFE(2) RANK RANGE hFE(1) RANGE hFE(2) MARKING O 70–140 25Min WO Y 120–240 40Min WY GR(G) 200–400 70Min WG １　 JinYu semiconductor www.htsemi.com