2SC2881

2SC2881 TRANSISTOR (NPN) FEATURES Small Flat Package High Transition Frequency High Voltage Complementary to 2SA1201 APPLICATIONS Power Amplifier and Voltage Amplifier MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 800 500 250 150 -55~+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions Min 120 120 5 0.1 0.1 80 240 1 1 120 30 V V MHz pF Typ Max Unit V V V µA µA IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=120V,IE=0 VEB=5V,IC=0 VCE=5V, IC=100mA IC=500mA,IB=50mA VCE=5V, IC=0.5A VCE=5V,IC=100mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE RANK RANGE MARKING O 80–160 CO1 Y 120–240 CY1 １　 JinYu semiconductor www.htsemi.com