2SC3052

2SC3052 TRANSISTOR (NPN) FEATURES Low collector to emitter saturation voltage VCE(sat)=0.3V max(@IC=100mA,IB=10mA) Excellent linearity of DC forward current gain MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector- Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 50 50 6 0.2 150 125 -55-125 Units V V V A mW ℃ ℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V (BR) CBO V (BR) CEO V (BR) EBO ICBO IEBO hFE(1) hFE(2) VCE (sat) VBE (sat) unless Test otherwise specified) conditions IE=0 MIN 50 50 6 0.1 0.1 150 50 0.3 1 180 V V MHz 800 MAX UNIT V V V IC = 100 μA, IC = 100 μA, IB=0 IE= 100 μA, IC=0 VCB= 50 V , IE=0 VEB= 6V , IC=0 VCE= 6V, IC= 1mA VCE= 6V, IC= 0.1mA IC=100mA, IB= 10mA IC= 100mA, IB= 10mA VCE= 6V, IC= 10mA VCE=6V, IE=0, f=1MHz VCE=6V,IE=-0.1mA, f=1KHz, RG=2KΩ μA μA fT Cob NF 4 15 pF dB CLASSIFICATION OF hFE(1) Rank Range Marking E 150~300 LE F 250~500 LF G 400~800 LG １　 JinYu semiconductor www.htsemi.com 2SC3052 ２ JinYu semiconductor www.htsemi.com 2SC3052 ３ JinYu semiconductor www.htsemi.com