2SC3356

2SC3356 TRANSISTOR (NPN) FEATURES Power dissipation PCM: 0.2 W (Tamb=25℃) SOT-23-3L 1. BASE 2. EMITTER 3. COLLECTOR 1. 02 0. 0. 95¡ À 025 TJ, Tstg: -55℃ to +150℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE unless otherwise specified) Test conditions MIN 20 12 3 1 1 50 6 2 300 GHz dB TYP MAX UNIT V V V Ic=10µA, IE=0 Ic= 1mA, IB=0 IE= 10µA, IC=0 VCB= 10 V, IE=0 VEB= 1V , IC=0 VCE= 10V, IC= 20mA VCE=10V, IC= 20mA VCE=10V, IC= 7mA, f = 1GHz 0. 35 2. 92¡ À0. 05 Collector current 0.1 A ICM: Collector-base voltage V(BR)CBO: 20 V Operating and storage junction temperature range 2. 80¡ À 05 0. 1. 60¡ À0. 05 1. 9 µA µA fT NF CLASSIFICATION OF hFE Marking Rank Range R23 Q 50-100 R24 R 80-160 R25 S 125-250 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５