2SC3437

2SC 3437 TRANSISTOR (NPN) SOT–23 FEATURES  High Transition Frequency  Low Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 15 5 200 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test conditions Min 40 15 5 0.1 0.1 40 20 0.3 1 200 6 V V MHz pF 240 Typ Max Unit V V V µA µA IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=40V, IE=0 VEB=5V, IC=0 VCE=1V, IC=10mA VCE=1V, IC=100mA IC=20mA, IB=1mA IC=20mA, IB=1mA VCE=10V,IC=10mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE(1) RANK RANGE MARKING R 40–80 CHR O 70–140 CHO Y 120–240 CHY １　 JinYu semiconductor www.htsemi.com