2SC3930

2SC3930 TRANSISTOR (NPN) SOT-323 FEATURES For high-frequency Amplification Complementary to 2SA1532 Optimum for RF amplification of FM/AM radios High transition frequency fT MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 30 20 5 30 150 150 -55-150 Units V V V mA mW ℃ ℃ 1.BASE 2.EMITTER 3.COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Transition frequency Common emitter reverse transfer capacitance Noise figure Reverse transfer impedance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE fT Cre NF Zrb Test conditions IE=0 MIN 30 20 5 0.1 0.1 70 150 1.5 4 50 220 MHz pF dB Ω TYP MAX UNIT V V V μA μA IC=100μA, IC= 100μA, IB=0 IE= 100μA, IC=0 VCB=10V,IE=0 VEB=5V,IC=0 VCE=10V,IC=1mA VCE=10V,IE=1mA, f=200MHZ VCB=10V,IC=1mA, f=10.7MHZ VCB=10V,IC=1mA, f=5MHz VCB=10V,IC=1mA, f=2MHz CLASSIFICATION OF hFE(1) Marking Range １　 JinYu VB 70-140 VC 110-220 semiconductor www.htsemi.com 2SC3930 ２ JinYu semiconductor www.htsemi.com 2SC3930 ３ JinYu semiconductor www.htsemi.com