2SC4097

2SC4097 TRANSISTOR (NPN) FEATURES High ICMax. ICMax=0.5A Low VCE(sat).Optimal for low voltage operation. Complements the 2SA1577 MAXIMUM RATINGS (TA=25℃unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 40 32 5 500 200 150 -55-150 Units V V V mA mW ℃ ℃ SOT-323 3 1 2 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector Output Capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=3V,IC=10mA IC=500mA, IB=50mA VCE=5V, IC=20mA,f =100MHz VCB=10V,IE=0,f=1MHZ 250 6 82 conditions MIN 40 32 5 1 1 390 0.4 V MHz pF TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range MARKING hFE P 82-180 CP Q 120-270 CQ R 180-390 CR １　 JinYu semiconductor www.htsemi.com