2SC4102

2 SC4102 TRANSISTOR (NPN) FEATURES  High Breakdown Voltage  Complements the 2SA1579 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 50 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=50µA, IE=0 IC=1mA, IB=0 IE=50µA, IC=0 VCB=100V, IE=0 VEB=4V, IC=0 VCE=6V, IC=2mA IC=10mA, IB=1mA VCE=12V,Ic=2mA ,f=100MHz VCB=12V, IE=0, f=1MHz 140 2.5 180 conditions Min 120 120 5 500 500 560 0.5 V MHz pF Typ Max Unit V V V nA nA CLASSIFICATION OF hFE RANK RANGE MARKING R 180–390 TR S 270–560 TS １　 JinYu semiconductor www.htsemi.com