2SC4116

2SC4116 TRANSISTOR (NPN) FEATURES High voltage and high current Excellent hFE linearity High hFE Low noise Complementary to 2SA1586 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Junction and Storage Temperature Value 60 50 5 150 100 150 -55-150 Units V V V mA mW ℃ ℃ SOT-323 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob NF Test conditions MIN 60 50 5 0.1 0.1 70 700 0.25 80 3.5 10 V MHz pF dB TYP MAX UNIT V V V μA μA IC=100μA,IE=0 IC=1mA,IB=0 IE=100μA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=6V,IC=2mA IC=100mA,IB=10mA VCE=10V,IC=1mA, VCB=10V,IE=0,f=1MHz VCE=6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ CLASSIFICATION OF hFE Rank Range Marking O 70-140 LO Y 120-240 LY GR 200-400 LG BL 350-700 LL １　 JinYu semiconductor www.htsemi.com 2SC4116 ２ JinYu semiconductor www.htsemi.com 2SC4116 ３ JinYu semiconductor www.htsemi.com