2SC4177

2 SC4177 TRANSISTOR (NPN) FEATURES  High DC Current Gain  Complementary to 2SA1611  High Voltage APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 60 50 5 100 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ SOT–323 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE* VCE(sat) VBE(sat) VBE fT Cob Test IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=60V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA IC=100mA, IB=10mA IC=100mA, IB=10mA VCE=6V, IC=1mA VCE=6V, IC=10mA VCB=6V, IE=0, f=1MHz 0.55 250 3 90 conditions Min 60 50 5 100 100 600 0.3 1 0.65 V V V MHz pF Typ Max Unit V V V nA nA *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE RANK RANGE MARKING L4 90–180 L4 L5 135–270 L5 L6 200–400 L6 L7 300–600 L7 １　 JinYu semiconductor www.htsemi.com