2SC4180

2 SC4180 TRANSISTOR (NPN) FEATURES  High DC Current Gain APPLICATIONS  General Purpose Amplification MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 120 120 5 50 150 833 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 1. BASE 2. EMITTER 3. COLLECTOR SOT–323 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* hFE(2) VCE(sat) VBE fT Cob Test IC=100µA, IE=0 IC=1mA, IB=0 IE=100µA, IC=0 VCB=120V, IE=0 VEB=5V, IC=0 VCE=6V, IC=1mA VCE=6V, IC=0.1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCE=6V, IC=1mA VCB=30V, IE=0, f=1MHz 0.55 50 2.5 135 100 0.3 0.65 V V MHz pF conditions Min 120 120 5 50 50 900 Typ Max Unit V V V nA nA *Pulse test: pulse width ≤350μs, duty Cycle≤ 2.0%. CLASSIFICATION OF hFE(1) RANK RANGE MARKING D15 135–270 D15 D16 200–400 D16 D17 300–600 D17 D18 450–900 D18 １　 JinYu semiconductor www.htsemi.com