2SC4374

2SC4374 TRANSISTOR (NPN) FEATURES Small Flat Package Low Collector- Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 80 80 5 400 500 250 150 -55~+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE fT Cob Test conditions Min 80 80 5 0.1 0.1 70 50 0.4 0.55 100 10 0.8 V V MHz pF 240 Typ Max Unit V V V µA µA IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=80V,IE=0 VEB=5V,IC=0 VCE=2V, IC=50mA VCE=2V, IC=200mA IC=200mA,IB=20mA VCE=2V, IC=5mA VCE=10V,IC=10mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE（1） RANK RANGE MARKING O 70–140 EO Y 120–240 EY １　 JinYu semiconductor www.htsemi.com