2SC4375

2SC4375 TRANSISTOR (NPN) FEATURES Small Flat Package Low Collector- Emitter Saturation Voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 30 5 1.5 500 250 150 -55~+150 SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE fT Cob Test conditions Min 30 30 5 0.1 0.1 100 320 2 1 120 40 V V MHz pF Typ Max Unit V V V µA µA IC=1mA,IE=0 IC=10mA,IB=0 IE=1mA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=2V, IC=500mA IC=1.5A,IB=30mA VCE=2V, IC=500mA VCE=2V,IC=500mA VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE RANK RANGE MARKING O 100–200 GO Y 160–320 GY １　 JinYu semiconductor www.htsemi.com