2SC5343

2SC5343 TRANSISTOR (NPN) FEATURES Excellent hFE Linearity Low Noise. MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC Ib PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Base Current -Continuous SOT-23 1. BASE Value 60 50 5 150 50 0.2 150 -55-150 Units V V V mA mA W ℃ ℃ 2. EMITTER 3. COLLECTOR Collector Power dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob NF Test conditions MIN 60 50 5 0.1 0.1 70 0.1 80 3.5 10 700 0.25 V MHz pF dB TYP MAX UNIT V V V μA μA IC=100μA,IE=0 IC=10mA,IB=0 IE=10μA,IC=0 VCB=60V,IE=0 VEB=5V,IC=0 VCE=6V,IC=2mA IC=100mA,IB=10mA VCE=10V,IC=1mA VCB=10V,IE=0,f=1MHz VCE=6V,Ic=0.1mA, f=1KHZ,Rg=10KΩ CLASSIFICATION OF Rank Range hFE O 70-140 Y 120-240 G 200-400 L 300-700 １　 JinYu semiconductor www.htsemi.com 2SC5343 ２ JinYu semiconductor www.htsemi.com