2SC5345

2SC5345 TRANSISTOR (NPN) FEATURES RF amplifier High current transition frequency fT=550MHz(Typ.), [VCE=6V, IE=-1mA] Low output capacitance : Cob=1.4pF(Typ.) [VCB=6V, IE=0] Low base time constant and high gain Excellent noise response Marking: 5345 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power dissipation Junction Temperature Storage Temperature Value 30 20 4 20 300 150 -55-150 Units V V V mA mW ℃ ℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test IC=10μA, IE=0 IC=5mA, IB=0 IE=10μA, IC=0 VCB=30V, IE=0 VEB=4V, IC=0 VCE=6V, IC=1mA IC=10mA, IB=1mA VCE=6V, IC=1mA VCB=6V, IE=0, f=1MHz 550 1.4 40 conditions MIN 30 20 4 0.5 0.5 240 0.3 V MHz pF TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range hFE R 40-80 O 70-140 Y 120-240 １　 JinYu semiconductor www.htsemi.com 2SC5345 ２ JinYu semiconductor www.htsemi.com