2SD1766

2SD1766 TRANSISTOR (NPN) FEATURES Low VCE(sat).VCE(sat)=0.16V(Typ.)(IC/IB=2A/0.2A) Complements to 2SB1188 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Value 40 32 5 2 500 150 -55-150 Units V V V A mW ℃ ℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector dissipation Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) VCE(sat) fT Cob Test IC=50μA, IE=0 IC=1mA, IB=0 IE=50μA, IC=0 VCB=20V, IE=0 VEB=4V, IC=0 VCE=3V, IC=500mA IC=2A, IB=0.2A VCE=5V, IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz 100 30 82 conditions MIN 40 32 5 1 1 390 0.8 V MHz pF TYP MAX UNIT V V V μA μA CLASSIFICATION OF Rank Range Marking hFE(1) P 82-180 DBP Q 120-270 DBQ R 180-390 DBR １　 JinYu semiconductor www.htsemi.com 2SD1766 ２　 JinYu semiconductor www.htsemi.com