2SD1898

2SD1898 TRANSISTOR (NPN) FEATURES High Breakdown Voltage and Current Excellent DC Current Gain Linearity Complement the 2SB1260 Low Collector-Emitter Saturation Voltage SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 100 80 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions Min 100 80 5 1 1 82 100 20 390 0.4 V MHz pF Typ Max Unit V V V µA µA IC=50µA,IE=0 IC=1mA,IB=0 IE=50µA,IC=0 VCB=80V,IE=0 VEB=4V,IC=0 VCE=3V, IC=500mA IC=500mA,IB=20mA VCE=10V,IC=50mA, f=100MHz VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE RANK RANGE MARKING P 82–180 Q 120–270 DF R 180–390 １　 JinYu semiconductor www.htsemi.com