2SD2142

2SD2142 TRANSISOR (NPN) FEATURES  Darlington Connection for a High hFE  High Input Impedance MARKING: R1M SOT–23 1. BASE MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RΘJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 32 12 300 200 625 150 -55～+150 Unit V V V mA mW ℃/W ℃ ℃ 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) fT Cob Test conditions Min 40 32 12 0.1 0.1 5000 1.4 200 2.5 V MHz pF Typ Max Unit V V V µA µA IC=100µA, IE=0 IC=10mA, IB=0 IE=100µA, IC=0 VCB=30V, IE=0 VEB=12V, IC=0 VCE=3V, IC=100mA IC=200mA, IB=0.2mA VCE=5V,IC=10mA, f=100MHz VCB=10V, IE=0, f=1MHz １　 JinYu semiconductor www.htsemi.com