2SD2413

2SD2413 TRANSISOR (NPN) FEATURES High collector to base voltage VCBO High collector to emitter voltage VCEO Large collector power dissipation PC Low collector to emitter saturation voltage VCE(sat) Marking:1S MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value 400 400 5 100 500 150 -55-150 Units V V V mA mW ℃ ℃ SOT-89 1. BASE 2. COLLECTOR 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(sat) fT Cob Test IC=100μA, IE=0 IC=0.5mA, IB=0 IE=100μA, IC=0 VCB=400V, IE=0 VEB=5V, IC=0 VCE=5V, IC=30mA IC=50mA, IB=5mA IC=50mA, IB=5mA VCE=30V, IC=20mA, f=200MHz VCB = 30V, IE=0, f=1MHz 40 7 30 1.5 1.5 V V MHz pF conditions MIN 400 400 5 50 50 TYP MAX UNIT V V V μA μA １　 JinYu semiconductor www.htsemi.com 2SD2413 １　 JinYu semiconductor www.htsemi.com