2SD874

2SD874 TRANSISTOR (NPN) FEATURES Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation Mini Power Type Package SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) VCE(sat) VBE(sat) fT Cob Test conditions Min 30 25 5 0.1 0.1 85 50 0.4 1.2 200 20 V V MHz pF 340 Typ Max Unit V V V µA µA IC=10µA,IE=0 IC=2mA,IB=0 IE=10µA,IC=0 VCB=20V,IE=0 VEB=4V,IC=0 VCE=10V, IC=500mA VCE=5V, IC=1A IC=500mA,IB=50mA IC=500mA,IB=50mA VCE=10V,IC=50mA, f=200MHz VCB=10V, IE=0, f=1MHz CLASSIFICATION OF hFE（1） RANK RANGE MARKING Q 85–170 ZQ R 120–240 ZR S 170–340 ZS １　 JinYu semiconductor www.htsemi.com