2SD965

2SD965 SOT-89-3L TRANSISTOR (NPN) 1. BASE FEATURES Low Collector-Emitter Saturation Voltage Large Collector Power Dissipation and Current Mini Power Type Package MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 40 20 7 5 750 167 150 -55~+150 2. COLLECTOR 3. EMITTER Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) hFE(2) hFE(3) Collector-emitter saturation voltage Transition frequency Collector output capacitance VCE(sat) fT Cob Test conditions Min 40 20 7 0.1 0.1 200 230 150 1 150 50 V MHz pF 800 Typ Max Unit V V V µA µA IC=100µA,IE=0 IC=1mA,IB=0 IE=10µA,IC=0 VCB=10V,IE=0 VEB=7V,IC=0 VCE=2V, IC=1mA VCE=2V, IC=500mA VCE=2V, IC=2A IC=3A,IB=0.1A VCE=6V,IC=50mA， f=200MHz VCB=20V, IE=0, f=1MHz CLASSIFICATION OF hFE（2） RANK RANGE Q 230–380 R 340–600 S 560–800 １　 JinYu semiconductor www.htsemi.com