2SD965A

2SD965A TRANSISTOR (NPN) FEATURES Audio amplifier Flash unit of camera Switching circuit MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature SOT-89 1. BASE 2. COLLECTOR Value 40 30 7 5 750 150 -55-150 Units V V V A mW ℃ ℃ 3. EMITTER 1 2 3 ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1) DC current gain hFE’(2) hFE(3) Collector-emitter saturation voltage Transition frequency Out capacitance VCE(sat) fT Cob Test conditions MIN 40 30 7 0.1 0.1 200 230 150 1 150 50 V MHz pF 800 TYP MAX UNIT V V V μA μA IC=0.1mA, IE=0 IC= 1mA. IB=0 IE= 10μA, IC=0 VCB= 10V,IE=0 VEB=7V, IC=0 VCE= 2 V, IC=1mA VCE= 2V, IC = 500mA VCE= 2V, IC =2A IC=3A, IB=0.1A VCE=6V, IC=50mA VCB=20 V , IE=0, f=1MHZ CLASSIFICATION OF Rank Range hFE(2) Q 230-380 R 340-600 S 560-800 １　 JinYu semiconductor www.htsemi.com 2SD965A ２ JinYu semiconductor www.htsemi.com