2SD999

2SD999 TRANSISTOR (NPN) FEATURES Low Collector-Emitter Saturation Voltage Mini Power Type Package Excellent DC Current Gain Linearity SOT-89-3L 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 30 25 5 1 500 250 150 -55~+150 Unit V V V A mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Base -emitter voltage Transition frequency Collector output capacitance Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE(1)* hFE(2)* VCE(sat)* VBE(sat)* VBE* fT Cob Test conditions Min 30 25 5 0.1 0.1 90 50 0.4 1.2 0.6 130 22 0.7 V V V MHz pF 400 Typ Max Unit V V V µA µA IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 VCB=30V,IE=0 VEB=5V,IC=0 VCE=1V, IC=100mA VCE=1V, IC=1A IC=1A,IB=0.1A IC=1A,IB=0.1A VCE=6V, IC=10mA VCE=6V,IC=10mA VCB=6V, IE=0, f=1MHz *Pulse test: pulse width ≤350μs, duty cycle≤ 2.0%. CLASSIFICATION OF hFE（1） RANK RANGE MARKING CM 90–180 CM CL 135–270 CL CK 200–400 CK １　 JinYu semiconductor www.htsemi.com