A1015

A05 11 TRANSISTOR (PNP) SOT-23 FEATURES High voltage and high current Excellent hFE Linearity Low niose Complementary to C1815 1. BASE 2. EMITTER 3. COLLECTOR MARKING: BA MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC TJ Tstg Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Parameter Value -50 -50 -5 150 200 125 -55-125 Units V V V mA mW ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions MIN -50 -50 -5 -0.1 -0.1 -0.1 130 400 -0.3 -1.1 80 V V MHz TYP MAX UNIT V V V uA uA uA IC= -100u A, IE=0 IC= -0.1mA, IB=0 IE= -100 u A, IC=0 VCB=-50V , VCE= -50V , VEB=- 5V, VCE=-6V, IE=0 IB=0 IC=0 IC= -2mA IC=-100 mA, IB= -10mA IC=-100 mA, IB= -10mA VCE=-10V, IC= -1mA f=30MHz CLASSIFICATION Rank Range OF hFE L 130-200 H 200-400 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ A05 11 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５