A42

A42 SOT-89-3L TRANSISTOR (NPN) FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage 1. BASE 2. COLLECTOR 3. EMITTER MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 310 305 5 500 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT Test conditions Min 310 305 5 0.25 0.25 5 0.1 60 80 75 0.2 0.9 50 V V MHz 250 Typ Max Unit V V V µA µA µA µA IC=100µA,IE=0 IC=1mA,IB=0 IE=100µA,IC=0 VCB=200V,IE=0 VCE=200V,IB=0 VCE=300V,IB=0 VEB=5V,IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=30mA IC=20mA,IB=2mA IC=20mA,IB=2mA VCE=20V,IC=10mA, f=30MHz Emitter cut-off current CLASSIFICATION OF hFE（2） RANK RANGE MARKING A 80–100 B1 100–150 A42 B2 150–200 C 200–250 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５