A44

A44 TRANSISTOR (NPN) SOT-89-3L FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage 1. BASE 2. COLLECTOR 3. EMITTER MARKING: A44 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value 500 400 6 300 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current Symbol V(BR)CBO V(BR)CEO ICBO IEBO hFE(1)* DC current gain hFE(2)* hFE(3)* hFE(4)* Collector-emitter saturation voltage VCE(sat)* VBE(sat)* Cob Cib * Test conditions Min 500 400 6 Typ Max Unit V V V IC=100µA,IE=0 IC=1mA,IB=0 IE=10µA,IC=0 VCB=400V,IE=0 VEB=4V,IC=0 VCE=10V, IC=1mA VCE=10V, IC=10mA VCE=10V, IC=50mA VCE=10V, IC=100mA IC=1mA,IB=0.1mA IC=10mA,IB=1mA IC=50mA,IB=5mA IC=10mA,IB=1mA VCB=20V, IE=0, f=1MHz VBE=0.5V, IC=0, f=1MHz V(BR)EBO 0.1 0.1 40 50 45 40 0.4 0.5 0.75 0.75 7 130 200 µA µA V V V V pF pF Base-emitter saturation voltage Collector output capacitance Emitter input capacitance *Pulse test: pulse width ≤300μs, duty cycle≤ 2.0%. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５