A733

A33 7 TRANSISTOR (PNP) FEATURE Collector-Base Voltage Complement to C945 MAXIMUM RATINGS(TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -60 -50 -5 -150 200 150 -55-150 Units V V V mA mW ℃ ℃ SOT-23 1. BASE 2. EMITTER 3. COLLECTOR ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter voltage Transition frequency Collector output capacitance Noise figure Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO IEBO hFE VCE(sat) VBE(on) fT Cob NF Test conditions MIN -60 -50 -5 -0.1 -0.1 120 -0.18 -0.58 50 4.5 6 7 20 -0.62 475 -0.3 -0.68 V V MHz pF dB TYP MAX UNIT V V V uA uA IC= -5uA,IE=0 IC= -1mA , IB=0 IE= -50uA, IC=0 VCB= -60 V , IE=0 VEB= -5 V , IC=0 VCE= -6 V, IC= -1mA IC= -100mA, IB=- 10mA VCE=-6V,IC=-1.0mA VCE=-6V,IC=-10mA VCB=-10V,IE=0,f=1MHZ VCE=-6V,IC=-0.3mA, Rg=10kΩ,f=100HZ CLASSIFICATION OF hFE Rank Range MARKING １　 JinYu L 120-220 CS H 220-475 semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ A33 7 Typical Characteristics ２　 JinYu semiconductor www.htsemi.com