A92

A92 SOT-89-3L TRANSISTOR (PNP) FEATURES Low Collector-Emitter Saturation Voltage High Breakdown Voltage 1. BASE 2. COLLECTOR 3. EMITTER MARKING: A92 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RθJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Collector Power Dissipation Thermal Resistance From Junction To Ambient Junction Temperature Storage Temperature Value -310 -305 -5 -500 500 250 150 -55~+150 Unit V V V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE(1) DC current gain hFE(2) hFE(3) Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency VCE(sat) VBE(sat) fT Test conditions Min -310 -305 -5 -0.25 -0.25 -5 -0.1 60 100 60 -0.2 -0.9 50 V V MHz 300 Typ Max Unit V V V µA µA µA µA IC=-100µA,IE=0 IC=-1mA,IB=0 IE=-100µA,IC=0 VCB=-200V,IE=0 VCE=-200V,IB=0 VCE=-300V,IB=0 VEB=-5V,IC=0 VCE=-10V, IC=-1mA VCE=-10V, IC=-10mA VCE=-10V, IC=-80mA IC=-20mA,IB=-2mA IC=-20mA,IB=-2mA VCE=-20V,IC=-10mA,f=30MHz Emitter cut-off current １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５