A94

A94 TRANSISTOR (PNP) FEATURES High voltage MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Junction Temperature Storage Temperature Value -400 -400 -5 -0.2 0.5 150 -55 to +150 Units V V V A W ℃ ℃ 1. BASE 2. COLLECTOR 3. EMITTER SOT-89-3L 1 2 3 ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current Symbol V(BR) CBO V(BR) CEO V(BR) EBO ICBO ICEO IEBO hFE(1) hFE(2) DC current gain hFE(3) hFE(4) VCE (sat) Collector-emitter saturation voltage VCE (sat) Base-emitter saturation voltage Transition frequency VBE (sat) fT IC=-50mA, IB=-5mA IC=-10mA, IB= -1mA VCE=-20V, IC=-10mA f =30MHz 50 -0.3 -0.75 V V MHz VCE=-10V, IC=-100mA VCE=-10V, IC=-50mA IC=-10mA, IB=-1mA 60 80 -0.2 V Test conditions Min -400 -400 -5 -0.1 -5 -0.1 80 70 300 Typ Max Unit V V V μA μA μA IC= -100μA, IE=0 IC= -1mA,IB=0 IE=-100μA,IC=0 VCB=-400V, IE=0 VCE=-400V, IB=0 VEB= -4V, IC=0 VCE=-10V, IC=-10mA VCE=-10V, IC=-1mA １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ Typical Characteristics -14 A94 500 Static Characteristic -100uA -90uA COMMON EMITTER Ta=25℃ hFE —— IC COMMON EMITTER VCE= -10V -12 300 COLLECTOR CURRENT IC (mA) Ta=100℃ -10 -80uA -70uA -60uA DC CURRENT GAIN hFE -8 100 Ta=25℃ -6 -50uA -40uA -4 -30uA -20uA IB=-10uA 30 -2 -0 -0 -4 -8 -12 -16 -20 10 -1 -3 -10 -30 -100 -200 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (mA) -10 VCEsat —— IC -1000 VBEsat —— Ta=25℃ IC COLLECTOR-EMITTER SATURATION VOLTAGE VCEsat (V) -3 BASE-EMITTER SATURATION VOLTAGE VBEsat (mV) -1 Ta=100 ℃ -0.3 -300 -0.1 Ta=100 ℃ Ta=25℃ -0.03 β=10 -0.01 -1 -3 -10 -30 -100 -200 -100 -1 β=10 -3 -10 -30 -100 -200 COLLECTOR CURRENT IC (mA) COLLECTOR CURRENT IC (mA) -200 IC —— VBE 100 fT —— IC T =1 00℃ a -30 TRANSITION FREQUENCY fT (MHz) -100 COLLECTOR CURRENT IC (mA) T =2 5℃ a -10 30 -3 COMMON EMITTER VCE=-10V -1 -200 -400 -600 -800 -1000 COMMON EMITTER VCE= -20V Ta=25℃ 10 -3 -10 -30 -100 BASE-EMMITER VOLTAGE VBE (mV) COLLECTOR CURRENT IC (mA) 300 Cob/Cib —— VCB/VEB f=1MHz IE=0/IC=0 600 PC —— Ta 100 COLLECTOR POWER DISSIPATION PC (mW) Cib Ta=25 ℃ 500 (pF) 400 CAPACITANCE C 30 Cob 300 10 200 3 100 1 -0.1 0 -0.3 -1 -3 -10 -20 0 25 50 75 100 125 150 REVERSE VOLTAGE V (V) AMBIENT TEMPERATURE Ta (℃ ) ２ JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５