AO3400

AO3400 30V N-Channel Enhancement Mode MOSFET VDS= 30V RDS(ON), Vgs@10V, Ids@5.8A < 28mΩ RDS(ON), Vgs@4.5V, Ids@5.0A < 33mΩ RDS(ON), Vgs@2.5V, Ids@4.0A < 52mΩ Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G S REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current TA = 25oC Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) TA = 75 C TJ, Tstg RθJA o Symbol VDS VGS ID IDM PD Limit 30 Unit V ± 12 5.8 A 30 1.4 W 1 -55 to 150 145 o o C C/W １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ AO3400 30V N-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Gate Resistance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage IS VSD IS = 1.6A, VGS = 0V 1.6 1.2 A V Qg VDS = 15V, ID = 5.8A Qgs VGS = 4.5V Qgd td(on) tr ID = 1A, VGEN = 10V td(off) tf Ciss VDS = 10V, VGS = 0V Coss f = 1.0 MHz Crss 33 115 pF RG = 3Ω 38 3 340 50 10 VDD = 15V, RL=2.7Ω 2.8 7 15 11 20 ns 1.6 nC 11 14 BVDSS RDS(on) RDS(on) RDS(on) VGS(th) IDSS IGSS gfs Rg VGS = 0V, ID = 250uA VGS = 10V, ID = 5.8A VGS = 4.5V, ID =5A VGS = 2.5V, ID =4A VDS =VGS, ID = 250uA VDS = 24V, VGS = 0V VGS = ± 12V, VDS = 0V VDS = 5V, ID = 5A F=1.0MHz 10 6 15 7 7.5 0.7 30 22.0 27.0 43.0 28.0 33.0 52.0 1.4 1 ±100 V uA nA S Ω mΩ V Symbol Test Condition Min. Typ. Miax. Unit Note: Pulse test: pulse width