AO3401

AO3401 30V P-Channel Enhancement Mode MOSFET VDS= -30V RDS(ON), Vgs@-10V, Ids@-4.2A < 64m Ω RDS(ON), Vgs@-4.5V, Ids@-4.0A < 75m Ω RDS(ON), Vgs@-2.5V, Ids@-1.0A < 120m Ω Features Advanced trench process technology High Density Cell Design For Ultra Low On-Resistance Package Dimensions D SOT-23-3L G REF. A B C D E F Millimeter Min. Max. 2.70 3.10 2.65 2.95 1.50 1.70 0.35 0.50 0 0.10 0.45 0.55 REF. G H K J L M S Millimeter Min. Max. 1.90 REF. 1.00 1.30 0.10 0.20 0.40 0.85 1.15 0° 10° Maximum Ratings and Thermal Characteristics (TA = 25oC unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Symbol Limit Unit VDS VGS ID IDM TA = 25 C o o -30 ±12 -4.2 -30 1.4 1 -55 to 150 125 o V A Maximum Power Dissipation Operating Junction and Storage Temperature Range Junction-to-Ambient Thermal Resistance (PCB mounted) TA = 75 C PD TJ, Tstg RθJA W o C C/W １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ AO3401 30V P-Channel Enhancement Mode MOSFET ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise noted) Parameter Static Drain-Source Breakdown Voltage Drain-Source On-State Resistance Drain-Source On-State Resistance Drain-Source On-State Resistance Gate Threshold Voltage Zero Gate Voltage Drain Current Gate Body Leakage Forward Transconductance Dynamic Total Gate Charge Gate-Source Charge Gate-Drain Charge Turn-On Delay Time Turn-On Rise Time Turn-Off Delay Time Turn-Off Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Source-Drain Diode Max. Diode Forward Current Diode Forward Voltage Symbol Test Condition Min. Typ. Miax. Unit BVDSS RDS(on) RDS(on) RDS(on) VGS(th) IDSS IGSS gfs VGS = 0V, ID = -250uA VGS = -10V, ID = -4.2A VGS = -4.5V, ID = -4A VGS = -2.5V, ID =-1A VDS =VGS, ID = -250uA VDS = -24V, VGS = 0V VGS = ± 12V, VDS = 0V VDS = -5V, ID = -5A -30 42.0 64.0 80.0 -0.7 -1 64.0 75.0 120.0 -1.3 -1 ± 100 7 11 V mΩ V uA nA S Qg Qgs Qgd td(on) tr td(off) tf Ciss Coss Crss VDS = 20V, ID = 5.7A VGS = 10V 9.4 2 3 6.3 3.2 38.2 12 954 115 77 pF ns nC VDD = 20V, RL=20Ω ID = 1A, VGEN = 10V RG = 6Ω VDS = 8V, VGS = 0V f = 1.0 MHz IS VSD IS = 1.8A, VGS = 0V -2.2 -1.0 A V Note: Pulse test: pulse width