B0530WS

B0520WS/B0530WS/B0540WS SCHOTTKY BARRIER DIODE FEATURES Low Forward Voltage Drop Guard Ring Construction for Transi ent Protection High Conductance Also Available in Lead Free Version MARKING: B0520WS: SD B0530WS: SE B0540WS: SF SOD-323 + - Maximum Ratings @TA=25℃ Parameter Peak Repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage Symbol VRRM VRWM VR VR(RMS) Io IFSM PD RθJA Tj TSTG dv/dt 14 21 0.5 5.5 200 625 150 -65~+150 1000 28 V A A mW ℃/W ℃ ℃ V/μS 20 30 40 B0520WS B0530WS B0540WS Unit V RMS Reverse Voltage Reverse voltage (DC) Average rectified output Current Forward current surge peak Power dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Voltage Rate of Change Electrical Characteristics @TA=25℃ Parameter Minimum Reverse Breakdown Voltage Symbol B0520WS 20 V(BR)R --VF1 Forward voltage VF2 VF3 Reverse current IR1 IR2 IR3 Reverse current IR4 IR5 Capacitance between terminals CT 0.3 0.385 -75 -250 --170 B0530WS -30 -0.36 0.45 --80 100 500 -170 B0540WS --40 -0.510 0.62 --10 -20 170 pF μA μA V V Unit Conditions IR=250μA IR=500μA IR=20μA IF=0.1A IF=0.5A IF=1A VR=10V VR=15V VR=20V VR=30V VR=40V VR=0,f=1MHz １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ B0520WS/B0530WS/B0540WS Typical Characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５