B5817W-5819W
SCHOTTKY BARRIER DIODE FEATURES For use in low voltage, high frequency inverters Free wheeling, and polarity protection applications. MARKING: B5817W: SJ B5818W:SK B5819W: SL Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃
Parameter Non-Repetitive Peak reverse voltage Peak repetitive Peak reverse voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current Peak forward surge current @=8.3ms Repetitive Peak Forward Current Power Dissipation Thermal Ambient Resistance Junction to Symbol VRM VRRM VRWM VR VR(RMS) IO IFSM IFRM Pd RθJA TSTG
SOD-123
+
-
B5817W
20 20 14
B5818W
30 30 21 1 9 1.5 500 250 -65~+150
B5819W
40 40 28
Unit V V V A A A mW ℃/W ℃
Storage temperature
ELECTRICAL CHARACTERISTICS (Tamb=25℃
unless
otherwise
specified)
Parameter Reverse breakdown voltage
Symbol V(BR)
Test IR= 1mA
conditions B5817W B5818W B5819W B5817W B5818W B5819W IF=1A IF=3A IF=1A IF=3A IF=1A IF=3A
MIN 20 30 40
MAX
UNIT V
Reverse voltage leakage current
IR
VR=20V VR=30V VR=40V B5817W B5818W B5819W
1 0.45 0.75 0.55 0.875 0.6 0.9 120
mA
V V V
Forward voltage
VF
Diode capacitance
CD
VR=4V, f=1MHz
pF
1
JinYu
semiconductor
www.htsemi.com
Date:2011/05
B5817W-5819W
Typical Characteristics
2
JinYu
semiconductor
www.htsemi.com
Date:2011/05
很抱歉,暂时无法提供与“B5818W”相匹配的价格&库存,您可以联系我们找货
免费人工找货- 国内价格
- 1+0.19499
- 100+0.18199
- 300+0.16899
- 500+0.15599
- 2000+0.14949
- 5000+0.14559
- 国内价格
- 1+0.105
- 100+0.098
- 300+0.091
- 500+0.084
- 2000+0.0805
- 5000+0.0784
- 国内价格
- 1+0.09563
- 30+0.09198
- 100+0.08833
- 500+0.08103
- 1000+0.07738
- 2000+0.07519