B772

B2 7 TRANSISTOR (PNP) FEATURES Low speed switching SOT-89 123 1. BASE 1 2. COLLETOR 2 3 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC RӨJA Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector Power Dissipation Thermal Resistance, junction to Ambient Value -40 -30 -5 -3 0.5 250 150 -55-150 Units V V V A W ℃/W ℃ ℃ 3. EMITTER Junction Temperature Storage Temperature ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cut-off current Collector cut-off current Emitter cut-off current DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Transition frequency Symbol V(BR)CBO V(BR)CEO V(BR)EBO ICBO ICEO IEBO hFE VCE(sat) VBE(sat) fT Test conditions MIN -40 -30 -5 -1 -10 -1 60 400 -0.5 -1.5 80 V V MHz TYP MAX UNIT V V V μA μA μA IC=-100μA ,IE=0 IC= -10mA , IB=0 IE= -100μA,IC=0 VCB= -40V, IE=0 VCE=-30V, IB=0 VEB=-6V, IC=0 VCE= -2V, IC= -1A IC=-2A, IB= -0.2A IC=-2A, IB= -0.2A VCE= -5V, IC=-0.1A f =10MHz CLASSIFICATION OF hFE Rank Range R 60-120 O 100-200 Y 160-320 GR 200-400 １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ B2 7 Typical characteristics ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５