BAP50-03

BAP50-03 GENERAL PURPOSE PIN DIODES FEATURES Low diode capacitance SOD-323 MARKING: A81 Low diode forward resistance Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Continuous reverse voltage Continuous Forward Current Power Dissipation (TA=90℃) Thermal Ambient Junction temperature Storage temperature Resistance Junction to Symbol VR IF Pd RθJA Tj TSTG Limits 50 50 200 85 -65~+150 -65~+150 Unit V mA mW K/W ℃ ℃ Electrical Ratings @TA=25℃ Parameter Continuous reverse voltage Forward voltage Reverse current Symbol VR VF IR Cd1A Cd1B Diode capacitance Cd2 Cd3 rD Diode forward resistance rD rD Min. 50 1.1 100 0.91 1.11 0.55 0.35 40 25 5 Typ. Max. Unit V V nA pF pF pF pF Ω Ω Ω Conditions IR=10µA IF=50mA VR=50V VR=0V,f=1MHz VR=0V,f=1MHz VR=1V,f=1MHz VR=5V,f=1MHz IF=0.5mA , f=100MHz; note1 IF=1mA , f=100MHz;note1 IF=10mA , f=100MHz;note1 Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. １　 JinYu semiconductor www.htsemi.com BAP50-03 ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５