BAP51-02

BAP51-02 GENERAL PURPOSE PIN DIODES FEATURES Low diode capacitance MARKING: A5 Low diode forward resistance Maximum Ratings and Electrical Characteristics, Single Diode @TA=25℃ Parameter Continuous reverse voltage Continuous Forward Current Power Dissipation (TA=90℃) Thermal Resistance from Junction to soldering point Junction temperature Storage temperature Symbol VR IF Pd RθJS Tj TSTG Limits 60 50 715 85 -65~+150 -65~+150 Unit V mA mW ℃/W ℃ ℃ Electrical Ratings @TA=25℃ Parameter Continuous reverse voltage Forward voltage Reverse current Symbol VR VF IR Cd1 Diode capacitance Cd2 Cd3 rD Diode forward resistance rD rD 0.4* 0.55 0.35 9 6.5 2.5 Min. 50 1.1 100 Typ. Max. Unit V V nA pF pF pF Ω Ω Ω Conditions IR=10μA IF=50mA VR=50V VR=0V,f=1MHz VR=1V,f=1MHz VR=5V,f=1MHz IF=0.5mA , f=100MHz;note1 IF=1mA , f=100MHz;note1 IF=10mA , f=100MHz;note1 Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. １　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５ BAP51-02 ２　 JinYu semiconductor www.htsemi.com Ｄａｔｅ：２０１１／０５