BAP64-05

BAP64-05 PIN DIODE FEATURES High voltage, current controlled RF resistor for RF attenuators and switches Low diode capacitance Low diode forward resistance Low series inductance For applications up to 3 GHz RF attenuators and switches SOT-23 Marking: 5K Maximum Ratings @TA=25℃ Parameter Continuous reverse voltage Continuous Forward Current Power Dissipation Thermal Resistance Junction to Ambient Junction temperature Storage temperature Symbol VR IF PD RθJA Tj TSTG Limits 175 100 2 50 500 150 -65~+150 Unit V mA mW ℃/W ℃ ℃ ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified) Parameter Reverse voltage leakage current Forward voltage Symbol IR VF Test VR=175V VR=20V IF=50mA VR=0, f=1MHz Diode capacitance Cd VR=1V, f=1MHz VR=20V, f=1MHz IF=0.5mA, f=100MHz;note1 IF=1mA, f=100MHz ;note1 Diode forward resistance rD IF=10mA, f=100MHz;note1 IF=100mA, f=100MHz;note1 0.52 0.37 0.23 20 10 2 0.7 1.55 0.35 40 20 3.8 1.35 μS Ω pF conditions MIN TYP MAX 10 1 1.1 UNIT µA V when switched from Charge carrier life time τL IF = 10 mA to IR = 6 mA; RL = 100 Ω; measured at IR =3mA Series inductance LS IF=100mA, f=100MHz 1.4 nH Note 1. Guaranteed on AQL basis: inspection level S4,AQL 1.0. １　 JinYu semiconductor www.htsemi.com BAP64-05 ２　 JinYu semiconductor www.htsemi.com